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 HiPerFASTTM IGBT
IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE(sat) = 3.2 V tfi(typ) = 160 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load TC = 25C
Maximum Ratings 1200 1200 20 30 30 15 60 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E
W C C C C C Features G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25C TJ = 125C 5 100 3.5 100 3.2 TJ = 125C 2.5 V V A mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole)
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 2002 IXYS All rights reserved
98659-A (7-02)
IXGH 15N120B IXGT 15N120B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 15 1720 VCE = 25 V, VGE = 0 V, f = 1 MHz 95 35 69 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 13 26 25 15 180 160 1.75 25 18 0.60 300 360 3.5 280 320 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns
e
Dim.
3.0 mJ ns ns mJ ns ns mJ 0.83 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Dim.
Min Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH 15N120B IXGT 15N120B
50
TJ = 25OC
150 125
9V
TJ = 25oC
VGE = 15V
40
IC - Amperes
30 20 10
IC - Amperes
VGS = 15V 13V 11V
100 75 50 25
13V 11V 9V 7V
7V
5V
5V
0
0
2
4
6
8
10
0
0
5
10
15
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics @ 25oC
50
TJ = 125OC VGS = 15V 13V 11V
Fig. 2. Extended Output Characteristics
1.6
VGE = 15V
VCE (SAT) - Normalized
40
1.4 1.2
IC = 30A
IC - Amperes
30 20 10
9V
IC = 15A
7V
1.0
IC = 7.5A
0.8 0.6 0.4
5V
0
0
2
4
6
8
10
-25
0
25
50
75
100 125 150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics @ 125oC
60 55 50 45 40 35 30 25 20 15 10 5 0
Fig. 4. Temperature Dependence of VCE(sat)
10000
TJ = 125 C
o
Capacitance - pF
TJ = -40oC
IC - Amperes
1000
100
TJ = 25 C
o
4
5
6
7
8
9
10
10
0
5
10
15
20
25
30
35
40
VGE - Volts
IXG_15N120B-P1
VCE - Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
(c) 2002 IXYS All rights reserved
IXGH 15N120B IXGT 15N120B
8 7
E(OFF) - millijoules
TJ = 125C
8
RG = 10
7
TJ = 125C IC = 30A
E(OFF)
E(OFF) - millijoules
6 5 4 3 2 1 0
5 10 15 20 25 30 35
E(OFF)
6 5 4 3 2 1 0
IC = 15A
E(OFF)
IC = 7.5A
E(OFF)
0
10
20
30
40
50
60
IC - Amperes
RG - Ohms
Fig. 7. Dependence of tfi and EOFF on IC.
16 14 12 10 8 6 4 2 0 0 10 20 30 40 50
IC = 15A VCE = 600V
Fig. 8. Dependence of tfi and EOFF on RG.
100
30
IC - Amperes
VGE - Volts
10
TJ = -55 to +125C
RG = 10 dV/dt < 5V/ns
1
0.1
0
200
400
600
800
1000
1200
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
1
D=0.5 D=0.2
Fig. 10. Turn-off Safe Operating Area
ZthJC (K/W)
0.1 D=0.1
D=0.05 D=0.02 D=0.01 Single pulse
0.01
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXGH15N120B-P2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1


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